Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

T. Tachikawa; M. Minohara; Y. Nakanishi; Y. Hikita; M. Yoshita; H. Akiyama; C. Bell; H. Y. Hwang

doi:10.1063/1.4733724

Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

Materials Science 2015-06-05 v1

Authors: T. Tachikawa , M. Minohara , Y. Nakanishi , Y. Hikita , M. Yoshita , H. Akiyama , C. Bell , H. Y. Hwang

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Abstract

We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes.

Keywords

metal-to-insulator transition anatase TiO2 thin films growth rate modulation carrier density oxygen vacancies

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@article{arxiv.1205.4065,
  title  = {Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation},
  author = {T. Tachikawa and M. Minohara and Y. Nakanishi and Y. Hikita and M. Yoshita and H. Akiyama and C. Bell and H. Y. Hwang},
  journal= {arXiv preprint arXiv:1205.4065},
  year   = {2015}
}

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13 pages 3 figures

Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

Abstract

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