Metal-insulator transition in the In/Si(111) surface
Materials Science
2009-11-11 v1
Abstract
The metal-insulator transition observed in the In/Si(111)-4x1 reconstruction is studied by means of ab initio calculations of a simplified model of the surface. Different surface bands are identified and classified according to their origin and their response to several structural distortions. We support the, recently proposed [New J. of Phys. 7 (2005) 100], combination of a shear and a Peierls distortions as the origin of the metal-insulator transition. Our results also seem to favor an electronic driving force for the transition.
Cite
@article{arxiv.cond-mat/0512613,
title = {Metal-insulator transition in the In/Si(111) surface},
author = {Sampsa Riikonen and Andres Ayuela and Daniel Sanchez-Portal},
journal= {arXiv preprint arXiv:cond-mat/0512613},
year = {2009}
}
Comments
Presented in the 23 European Conference in Surface Science, Berlin, September 2005. Submitted to Surface Science (proceedings of the conference) in August 2005