The T centre, a silicon-native spin-photon interface with telecommunications-band optical transitions and long-lived microwave qubits, offers an appealing new platform for both optical quantum memory and microwave to optical telecommunications band transduction. A wide range of quantum memory and transduction schemes could be implemented on such a platform, with advantages and disadvantages that depend sensitively on the ensemble properties. In this work we characterize T centre spin ensembles to inform device design. We perform the first T ensemble optical depth measurement and calculate the improvement in centre density or resonant optical enhancement required for efficient optical quantum memory. We further demonstrate a coherent microwave interface by coherent population trapping (CPT) and Autler-Townes splitting (ATS). We then determine the most promising microwave and optical quantum memory protocol for such ensembles. By estimating the memory efficiency both in free-space and in the presence of a cavity, we show that efficient optical memory is possible with forecast densities. Finally, we formulate a transduction proposal and discuss the achievable efficiency and fidelity.
@article{arxiv.2209.11731,
title = {Memory and transduction prospects for silicon T centre devices},
author = {Daniel B Higginbottom and Faezeh Kimiaee Asadi and Camille Chartrand and Jia-Wei Ji and Laurent Bergeron and Michael L. W. Thewalt and Christoph Simon and Stephanie Simmons},
journal= {arXiv preprint arXiv:2209.11731},
year = {2022}
}