Measuring the Kapitza Resistance between a Passivated Semiconductor and Liquid Helium
Materials Science
2023-12-08 v1
Abstract
In this paper, we describe an experimental investigation into the effect of passivation layer thickness on heat dissipation between a quartz substrate and liquid helium. We have observed that by depositing SiN from 0 to 240 nm, the Kapitza resistance increases by 0.0365 m^2.K/W per nanometer more than for an unpassivated semiconductor. We hypothesize that this increase in Kapitza resistance represents an additional barrier to the cooling of semiconductor devices in liquid helium.
Keywords
Cite
@article{arxiv.2312.03713,
title = {Measuring the Kapitza Resistance between a Passivated Semiconductor and Liquid Helium},
author = {Babak Mohammadian and Mark A. McCulloch and Valerio Gilles and Thomas Sweetnam and Lucio Piccirilo},
journal= {arXiv preprint arXiv:2312.03713},
year = {2023}
}
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7 pages