Measurement of Coulomb drag between Anderson insulators
Mesoscale and Nanoscale Physics
2008-02-28 v1 Disordered Systems and Neural Networks
Abstract
We report observations of the Coulomb drag effect between two effectively 2-d insulating a-Si_{1-x}Nb_{x} films. We find that there only exist a limited range of experimental parameters over which we can measure a sizable linear-response transresistivity (\rho_{d}). The temperature dependence of \rho_{d} is consistent with the layers being Efros-Shklovskii Anderson insulators provided that a 3-d density of states and a localization length smaller than that obtained from the DC layer-conductivity are assumed.
Keywords
Cite
@article{arxiv.0802.4073,
title = {Measurement of Coulomb drag between Anderson insulators},
author = {K. Elsayad and J. P. Carini and D. V. Baxter},
journal= {arXiv preprint arXiv:0802.4073},
year = {2008}
}
Comments
4 pages, 4 figures