Mean volume reflection angle
Abstract
The mean volume reflection angle of a high-energy charged particle passing through a bent crystal is expressed as an integral involving the effective interplanar potential over a single crystal period. Implications for positively and negatively charged particles, and silicon crystal orientations (110) and (111) are discussed. A generic next-to-leading-order expansion in the ratio of the particle energy to the crystal bending radius is given. For positively charged particles, the dependence of the mean volume reflection angle on proves to be approximately linear, whereas for negatively charged particles the linear behaviour is modified by an -dependent logarithmic factor. Up-to-date experimental data are confronted with predictions based on commonly used atomic potentials.
Cite
@article{arxiv.2003.02119,
title = {Mean volume reflection angle},
author = {M. V. Bondarenco},
journal= {arXiv preprint arXiv:2003.02119},
year = {2020}
}
Comments
20 pages, 10 figures, to be published in Phys. Rev. AB