Magnetically ordered state at correlated oxide interfaces: the role of random oxygen defects
Abstract
Using an effective one-band Hubbard model with disorder, we consider magnetic states of the correlated oxide interfaces, where effective hole self-doping and a magnetially ordered state emerge due to electronic and ionic reconstructions. By employing the coherent potential approximation, we analyze the effect of random oxygen vacancies on the two-dimensional magnetism. We find that the random vacancies enhance the ferromagnetically ordered state and stabilize a robust magnetization above a critical vacancy concentration of about c=0.1. In the strong-correlated regime, we also obtain a nonmonotonic increase of the magnetization upon an increase of vacancy concentration and a substantial increase of the magnetic moments, which can be realized at oxygen reduced high-Tc cuprate interfaces.
Cite
@article{arxiv.1205.1981,
title = {Magnetically ordered state at correlated oxide interfaces: the role of random oxygen defects},
author = {Natalia Pavlenko and Thilo Kopp},
journal= {arXiv preprint arXiv:1205.1981},
year = {2013}
}
Comments
8 pages, 2 figures, submitted to J Supercond Novel Magnetism (ICSM12 conference contribution)