English

Low Tc Hafnium Kinetic Inductance Device with High Internal Quality Factor

High Energy Physics - Experiment 2025-03-12 v2

Abstract

Kinetic inductance devices (KIDs) are superconducting resonators with high kinetic inductance sensitive to external energy perturbations. KIDs made with superconductors having TcT_c far below one Kelvin are of particular interest for sensing minuscule signals, such as light dark matter detection and millimeter wave telescopes for astronomy and cosmology. In this work, we report the promising performance of KIDs fabricated with Hafnium from heated sputter depositions. The KIDs have TcT_c lower than 249±\pm2 mK, the internal quality factor (QiQ_i) of the resonators exceeds 10510^5 and the temperature dependence of the resonances can be described by the generalized Mattis-Bardeen model with a disorder parameter Γ=4×103Δ0\Gamma=4\times10^{-3}\Delta_0. Post-fabrication annealing at temperatures above the deposition temperature can further reduce the TcT_c and Γ\Gamma without reducing QiQ_i, leading to improvements in energy resolution.

Keywords

Cite

@article{arxiv.2502.19818,
  title  = {Low Tc Hafnium Kinetic Inductance Device with High Internal Quality Factor},
  author = {Xinran Li and Aritoki Suzuki and Maurice Garcia-Sciveres},
  journal= {arXiv preprint arXiv:2502.19818},
  year   = {2025}
}

Comments

7 pages, 5 figures, prepared for submission to Applied Physcis Letters