Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon

Darshan C. Kundaliya; S. B. Ogale; S. Dhar; K. F. McDonald; E. Knoesel; T. Osedach; S. E. Lofland; S. R. Shinde; T. Venkatesan

doi:10.1016/j.jmmm.2005.04.017

Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon

Materials Science 2009-11-11 v1

Authors: Darshan C. Kundaliya , S. B. Ogale , S. Dhar , K. F. McDonald , E. Knoesel , T. Osedach , S. E. Lofland , S. R. Shinde , T. Venkatesan

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (001) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in-situ PLD grown through the step of high temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (100) substrate. The ferromagnetic transition temperature (TC ~ 215 K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ~15 degrees in the ferromagnetic state.

Keywords

GaFeO3 thin films YBCO buffer layer second harmonic generation Kerr rotation ferromagnetic transition

Cite

@article{arxiv.cond-mat/0508159,
  title  = {Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon},
  author = {Darshan C. Kundaliya and S. B. Ogale and S. Dhar and K. F. McDonald and E. Knoesel and T. Osedach and S. E. Lofland and S. R. Shinde and T. Venkatesan},
  journal= {arXiv preprint arXiv:cond-mat/0508159},
  year   = {2009}
}

Comments

16 pages, 4 figures, To be published in J. Magn. Magn. Mat

Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon

Abstract

Keywords

Cite

Comments

Related papers