Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a FZ-grown silicon. A classification of the large-scale impurity accumulations in CZ Si is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si is also proposed. In addition, the images of the large-scale impurity accumulations obtained by means of the scanning mid-IR-laser microscopy are demonstrated.
Cite
@article{arxiv.1106.1202,
title = {Large-scale defect accumulations in Czochralski-grown silicon},
author = {V. P. Kalinushkin and A. N. Buzynin and V. A. Yuryev and O. V. Astafiev},
journal= {arXiv preprint arXiv:1106.1202},
year = {2011}
}
Comments
Silicon'96, 5-th Scientific and Business Conf., Roznov pod Rad-hostem, Czech Republic, 5-8 November 1996