After growing successfully high quality VP2 single crystals, we studied systematically their longitudinal ρxx(T) and Hall resistivity ρyx(T) at various magnetic fields, combining the electronic band and Fermi surface (FS) calculations. Band calculations reveal that VP2 is a type-II nodal-line semimetal, evidenced by the Hall resistivity measurements. It is found that the magnetoresistance (MR) at higher magnetic fields exhibits a linear behavior and does not show any sign of saturation, reaching 170\% at 40 K up to 9 T, which is determined by the intrinsic electronic structure and dominated by the Lorenz force, demonstrated by the resistivity anisotropy measurements and the numerical simulations. We also found that the existence of small amount magnetic impurities (V4+, S=1/2, 2.24\%) results in Kondo effect emerging in ρxx(T), the conductivity at lower magnetic fields exhibits a typical weak anti-localization (WAL) behavior. These results illustrate that VP2 is a platform to study the electronic transport properties of a topological material containing magnetic impurities.
@article{arxiv.2604.26480,
title = {Large magnetoresistance and weak-antilocalization in the nodal-line semimetal VP2},
author = {Chunxiang Wu and Shuijin Chen and Tingyu Zhou and Le Liu and Xin Peng and Jianjian Jia and Xinyu Yu and Hangdong Wang and Jinhu Yang and Jianhua Du and Minghu Fang},
journal= {arXiv preprint arXiv:2604.26480},
year = {2026}
}