A simple and effective method for the junction termination design was suggested. Optimization method uses lateral charge function F(x) which depends from two arguments and can be changed in wide range of shapes. To demonstrate method effectiveness, design and optimization example for the HV diode (1800 V) edge termination was shown. Achieved breakdown voltage is 93% of the corresponding 1D structure breakdown voltage.
Cite
@article{arxiv.1611.10352,
title = {Junction termination extension (JTE) with variation lateral doping (VLD) optimization method},
author = {Evgeny Chernyavskiy},
journal= {arXiv preprint arXiv:1611.10352},
year = {2016}
}