English

Itinerant origin of the ferromagnetic quantum critical point in Fe(Ga,Ge)3

Strongly Correlated Electrons 2013-08-28 v1 Materials Science

Abstract

The electronic structure and magnetic properties of FeGa3 and doped FeGa3 are studied using density functional calculations. An itinerant mechanism for ferromagnetism is found both for n-type doping with Ge and also for p-type doping. Boltzmann transport calculations of the thermopower are also reported.

Keywords

Cite

@article{arxiv.1305.2063,
  title  = {Itinerant origin of the ferromagnetic quantum critical point in Fe(Ga,Ge)3},
  author = {David J. Singh},
  journal= {arXiv preprint arXiv:1305.2063},
  year   = {2013}
}