English

Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing

Applied Physics 2021-10-01 v1 Emerging Technologies

Abstract

The first report on ion transport through atomic sieves of atomically-thin 2D material is provided to solve critical limitations of electrochemical random-access memory (ECRAM) devices.

Keywords

Cite

@article{arxiv.2109.14935,
  title  = {Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing},
  author = {Revannath Dnyandeo Nikam and Jongwon Lee and Wooseok Choi and Writam Banerjee and Myonghoon Kwak and Manoj Yadav and Hyunsang Hwang},
  journal= {arXiv preprint arXiv:2109.14935},
  year   = {2021}
}
R2 v1 2026-06-24T06:30:41.720Z