English

Ion-Assisted Nanoscale Material Engineering in Atomic Layers

Materials Science 2024-10-10 v1 Mesoscale and Nanoscale Physics Applied Physics

Abstract

Achieving deterministic control over the properties of low-dimensional materials with nanoscale precision is a long-sought goal. Mastering this capability has a transformative impact on the design of multifunctional electrical and optical devices. Here, we present an ion-assisted synthetic technique that enables precise control over the material composition and energy landscape of two-dimensional (2D) atomic crystals. Our method transforms binary transition metal dichalcogenides (TMDs), like MoSe2_2, into ternary MoS2α_{2\alpha}Se2(1α)_{2(1-{\alpha}}) alloys with systematically adjustable compositions, α{\alpha}. By piecewise assembly of the lateral, compositionally modulated MoS2α_{2\alpha}Se2(1α)_{2(1-{\alpha})} segments within 2D atomic layers, we present a synthetic pathway towards the realization of multi-compositional designer materials. Our technique enables the fabrication of complex structures with arbitrary boundaries, dimensions as small as 30 nm, and fully customizable energy landscapes. Our optical characterizations further showcase the potential for implementing tailored optoelectronics in these engineered 2D crystals.

Keywords

Cite

@article{arxiv.2410.06181,
  title  = {Ion-Assisted Nanoscale Material Engineering in Atomic Layers},
  author = {Hossein Taghinejad and Mohammad Taghinejad and Sajjad Abdollahramezani and Qitong Li and Eric V. Woods and Mengkun Tian and Ali A. Eftekhar and Yuanqi Lyu and Xiang Zhang and Pulickel M. Ajayan and Wenshan Cai and Mark L. Brongersma and James G. Analytis and Ali Adibi},
  journal= {arXiv preprint arXiv:2410.06181},
  year   = {2024}
}

Comments

22 pages, 5 Figures

R2 v1 2026-06-28T19:13:14.899Z