English

Interplay between electronic topology and crystal symmetry: Dislocation-line modes in topological band-insulators

Mesoscale and Nanoscale Physics 2014-12-03 v2 Strongly Correlated Electrons

Abstract

We elucidate the general rule governing the response of dislocation lines in three-dimensional topological band insulators. According to this K-b-t{\bf K}\text{-}{\bf b}\text{-}{\bf t} rule, the lattice topology, represented by dislocation lines oriented in direction t{\bf t} with Burgers vector b{\bf b}, combines with the electronic-band topology, characterized by the band-inversion momentum Kinv{\bf K}_{\rm inv}, to produce gapless propagating modes when the plane orthogonal to the dislocation line features a band inversion with a nontrivial ensuing flux Φ=Kinvb(mod2π)\Phi={\bf K}_{\rm inv}\cdot {\bf b}\,\, ({\rm mod\,\,2\pi}). Although it has already been discovered by Y. Ran {\it et al.}, Nature Phys. {\bf 5}, 298 (2009), that dislocation lines host propagating modes, the exact mechanism of their appearance in conjunction with the crystal symmetries of a topological state is provided by the K-b-t{\bf K}\text{-}{\bf b}\text{-}{\bf t} rule . Finally, we discuss possible experimentally consequential examples in which the modes are oblivious for the direction of propagation, such as the recently proposed topologically-insulating state in electron-doped BaBiO3_3.

Keywords

Cite

@article{arxiv.1401.4044,
  title  = {Interplay between electronic topology and crystal symmetry: Dislocation-line modes in topological band-insulators},
  author = {Robert-Jan Slager and Andrej Mesaros and Vladimir Juricic and Jan Zaanen},
  journal= {arXiv preprint arXiv:1401.4044},
  year   = {2014}
}

Comments

Main text + supplementary material, published version