Interplay between electronic topology and crystal symmetry: Dislocation-line modes in topological band-insulators
Abstract
We elucidate the general rule governing the response of dislocation lines in three-dimensional topological band insulators. According to this rule, the lattice topology, represented by dislocation lines oriented in direction with Burgers vector , combines with the electronic-band topology, characterized by the band-inversion momentum , to produce gapless propagating modes when the plane orthogonal to the dislocation line features a band inversion with a nontrivial ensuing flux . Although it has already been discovered by Y. Ran {\it et al.}, Nature Phys. {\bf 5}, 298 (2009), that dislocation lines host propagating modes, the exact mechanism of their appearance in conjunction with the crystal symmetries of a topological state is provided by the rule . Finally, we discuss possible experimentally consequential examples in which the modes are oblivious for the direction of propagation, such as the recently proposed topologically-insulating state in electron-doped BaBiO.
Keywords
Cite
@article{arxiv.1401.4044,
title = {Interplay between electronic topology and crystal symmetry: Dislocation-line modes in topological band-insulators},
author = {Robert-Jan Slager and Andrej Mesaros and Vladimir Juricic and Jan Zaanen},
journal= {arXiv preprint arXiv:1401.4044},
year = {2014}
}
Comments
Main text + supplementary material, published version