Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity often is measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution then can be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.
@article{arxiv.0804.4387,
title = {Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6},
author = {M. Filippi and B. Kundys and R. Ranjith and A. K. Kundu and W. Prellier},
journal= {arXiv preprint arXiv:0804.4387},
year = {2008}
}