Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy

H. Wadati; D. G. Hawthorn; J. Geck; T. Z. Regier; R. I. R. Blyth; T. Higuchi; Y. Hotta; Y. Hikita; H. Y. Hwang; G. A. Sawatzky

doi:10.1063/1.3177328

Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy

Strongly Correlated Electrons 2009-07-15 v1 Materials Science

Authors: H. Wadati , D. G. Hawthorn , J. Geck , T. Z. Regier , R. I. R. Blyth , T. Higuchi , Y. Hotta , Y. Hikita , H. Y. Hwang , G. A. Sawatzky

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Abstract

We present an x-ray absorption study of the dependence of the V oxidation state on the thickness of LaVO $_3$ (LVO) and capping LaAlO $_3$ (LAO) layers in the multilayer structure of LVO sandwiched between LAO. We found that the change of the valence of V as a function of LAO layer thickness can be qualitatively explained by a transition between electronically reconstructed interfaces and a chemical reconstruction. The change as a function of LVO layer thickness is complicated by the presence of a considerable amount of V $^{4+}$ in the bulk of the thicker LVO layers.

Keywords

oxide interfaces

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@article{arxiv.0906.3519,
  title  = {Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy},
  author = {H. Wadati and D. G. Hawthorn and J. Geck and T. Z. Regier and R. I. R. Blyth and T. Higuchi and Y. Hotta and Y. Hikita and H. Y. Hwang and G. A. Sawatzky},
  journal= {arXiv preprint arXiv:0906.3519},
  year   = {2009}
}

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11 pages, 4 figures

Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy

Abstract

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