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Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure

Materials Science 2018-01-24 v1
Authors: V. Ya. Aleshkin , A. A. Dubinov , S. V. Morozov , M. Ryzhii , T. Otsuji , V. Mitin , M. S. Shur , V. Ryzhii
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Abstract

We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3_3B5_5 heterostructures.

Keywords

interband photodetectors quantum-well infrared photodetectors hgte-cdhgte quantum-well heterostructure photoconductive gain cdhgte a3b5 heterostructures

Cite

@article{arxiv.1801.07396,
  title  = {Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure},
  author = {V. Ya. Aleshkin and A. A. Dubinov and S. V. Morozov and M. Ryzhii and T. Otsuji and V. Mitin and M. S. Shur and V. Ryzhii},
  journal= {arXiv preprint arXiv:1801.07396},
  year   = {2018}
}

Comments

6 pages, 6 figures

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