Related papers: Interband infrared photodetectors based on HgTe--C…
We report results on the effect of a non-sharp and disordered potential in Quantum Well Infrared Photodetectors (QWIP). Scanning electronic transmission microscopy is used to measure the alloy profile of the structure which is shown to…
Thanks to their wavelength diversity and to their excellent uniformity, Quantum Well Infrared Photodetectors (QWIP) emerge as potential candidates for astronomical or defense applications in the very long wavelength infrared (VLWIR)…
Quantum Well Infrared Photodetector (QWIP) usually suffer from a too moderate quantum efficiency and too large dark current which is often announced as crippling for low flux applications. Despite this reputation we demonstrate the ability…
We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation…
We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system. Conventional material systems have matured into successful…
High-speed ultra-broadband detectors play a crucial role in aerospace technology, and national security etc. The interfacial work function internal photoemission (IWIP) detector employs multiple absorption mechanism comprehensively across…
One of the major challenges of mid-infrared astronomical heterodyne interferometry is its sensitivity limitations. Detectors capable of handling several 10 GHz bandwidths have been identified as key building blocks of future instruments.…
We present a mid-IR ($\lambda \approx$ 8.3 $\mu$m) quantum well infrared photodetector (QWIP) fabricated on a mid-IR transparent substrate, allowing photodetection with illumination from either the front surface or through the substrate.…
Due to their excellent optical and electrical properties as well as versatile growth and fabrication processes, lead halide perovskites have been widely considered as promising candidates for green energy and opto-electronic related…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet,…
The low flux infrared imaging needs performant high wavelength detectors. Quantum Well Infrared Photodetectors (QWIP), thanks to the maturity of GaAs, the possibility to adjust the detected wavelength on a large range and to realize large…
Emerging colloidal quantum dot (cQD) photodetectors currently challenge established state-of-the-art infrared photodetectors in response speed, spectral tunability, simplicity of solution processable fabrication, and integration onto curved…
Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates,…
The study proposes to use the photon trapping micro-structures to enhance quantum efficiency of the mid infrared photodetectors. The nanostructure that is consist of micro holes reduces reflection and bends the near normally incident light…
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs…
The effect of electron correlation on the photocurrent of self-assembled InAs/InGaAs quantum dot infrared photo-detector (QDIPs) is studied. It is found that Coulomb interaction and level mixing in the many-body open system lead to double…
Terahertz (THz) and sub-THz frequency emitter and detector technologies are receiving increasing attention, underpinned by emerging applications in ultra-fast THz physics, frequency-combs technology and pulsed laser development in this…
The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for realizing high performance opto-electronic devices such as photodetectors and light sources1-3.…
Two-dimensional (2D) InSe and WS$_2$ exhibit promising characteristics for optoelectronic and photoelectrochemical applications, e.g. photodetection and photocatalytic water splitting. However, both of them have poor absorption of visible…