Electric conduction in thin graphite film was tuned by two gate electrodes to clarify how the gate electric field induces electric carriers in thin graphite. The graphite was sandwiched between two gate electrodes arranged in a top and bottom gate configuration. A scan of the top gate voltage generates a resistance peak in ambiploar response. The ambipolar peak is shifted by the bottom gate voltage, where the shift rate depends on the graphite thickness. The thickness-dependent peak shift was clarified in terms of the inter-layer screening length to the electric field in the double-gated graphite film. The screening length of 1.2 nm was experimentally obtained.
@article{arxiv.0803.0816,
title = {Inter-Layer Screening Length to Electric Field in Thin Graphite Film},
author = {Hisao Miyazaki and Shunsuke Odaka and Takashi Sato and Sho Tanaka and Hidenori Goto and Akinobu Kanda and Kazuhito Tsukagoshi and Youiti Ootuka and Yoshinobu Aoyagi},
journal= {arXiv preprint arXiv:0803.0816},
year = {2008}
}
Comments
5 pages, 4 figures. To be published in Applied Physics Express