Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-dimensional materials have the potential to enable the next generation of high performance, low-cost printed digital electronics. Here we demonstrate air-stable, low voltage (< 5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2) and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating a switching time of {\tau} ~ 3.3 {\mu}s for the MoS2 FETs. We achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. We then integrate MoS2 and IDT-BT FETs to realise inkjet-printed complementary logic inverters with a voltage gain |Av| ~ 4 when in resistive load configuration and |Av| ~ 1.36 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.
@article{arxiv.2011.12359,
title = {Inkjet printed circuits with two-dimensional semiconductor inks for high-performance electronics},
author = {Tian Carey and Adrees Arbab and Luca Anzi and Helen Bristow and Fei Hui and Sivasambu Bohm and Gwenhivir Wyatt-Moon and Andrew Flewitt and Andrew Wadsworth and Nicola Gasparini and Jong Min Kim and Mario Lanza and Iain McCulloch and Roman Sordan and Felice Torrisi},
journal= {arXiv preprint arXiv:2011.12359},
year = {2020}
}