Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the {\pi}-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher energy bands.
@article{arxiv.1209.0318,
title = {Infrared spectroscopy of hole doped ABA-stacked trilayer graphene},
author = {N. Ubrig and P. Blake and D. van der Marel and A. B. Kuzmenko},
journal= {arXiv preprint arXiv:1209.0318},
year = {2012}
}
Comments
6 pages, 6 figures Corrected sign of fig 3 and visibilty of fig 6