Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission

M. Fischer; A. Sperlich; H. Kraus; T. Ohshima; G. V. Astakhov; V. Dyakonov

doi:10.1103/PhysRevApplied.9.054006

Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission

Materials Science 2018-05-09 v1

Authors: M. Fischer , A. Sperlich , H. Kraus , T. Ohshima , G. V. Astakhov , V. Dyakonov

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Abstract

We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.

Keywords

silicon carbide spin defects optical pumping microwave emission maser population inversion spin-lattice relaxation

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@article{arxiv.1709.00052,
  title  = {Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission},
  author = {M. Fischer and A. Sperlich and H. Kraus and T. Ohshima and G. V. Astakhov and V. Dyakonov},
  journal= {arXiv preprint arXiv:1709.00052},
  year   = {2018}
}

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8 pages, 6 figures

Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission

Abstract

Keywords

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