High-field Current-carrying Capacity of Semiconducting Carbon Nanotubes
Materials Science
2008-06-09 v2
Abstract
It is shown that current saturation in semiconducting carbon nanotubes is indistinguishable from metallic nanotubes if the carrier density is above a critical value determined by the bandgap and the LO phonon energy. This feature stems from the higher number of current-carrying states in the semiconducting tubes due to the van-Hove singularity at the band-edge. Above this critical carrier density, the ensemble saturation velocity at high-fields is found to be independent of the bandgap, but strongly dependent on the carrier density, explaining recent observations.
Keywords
Cite
@article{arxiv.0804.3997,
title = {High-field Current-carrying Capacity of Semiconducting Carbon Nanotubes},
author = {Debdeep Jena},
journal= {arXiv preprint arXiv:0804.3997},
year = {2008}
}
Comments
5 pages, 5 figures