Related papers: High-field Current-carrying Capacity of Semiconduc…
Using low-resistance electrical contacts, we have measured the intrinsic high-field transport properties of metallic single-wall carbon nanotubes. Individual nanotubes appear to be able to carry currents with a density exceeding 10^9…
Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25…
Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field,…
High frequency conductivity of hot electrons in an undoped single walled achiral carbon nanotubes (CNTs) under the influence of ac-dc driven fields is considered. We investigated semiclassically by solving the Boltzmann's transport equation…
We study theoretically the electronic structure, transport and optical properties for a zigzag single-wall carbon nanotube connected to two normal conductor leads under the irradiation of an external electromagnetic field at low…
Efficient and controlled charge transport in networks of semiconducting single-walled carbon nanotubes is the basis for their application in electronic devices, especially in field-effect transistors and thermoelectrics. The recent advances…
Suspended single-walled carbon nanotube devices comprised of high quality electrical contacts and two electrostatic gates per device are obtained. Compared to nanotubes pinned on substrates, the suspended devices exhibit little hysteresis…
We investigate the quantum transport through a single-wall carbon nanotube connected to leads in the presence of an external radiation field. We analyze the conductance spectrum as a function of the frequency and strength of the field. We…
We characterize the current-carrying capacity (CCC), or ampacity, of highly-conductive, light, and strong carbon nanotube (CNT) fibers by measuring their failure current density (FCD) and continuous current rating (CCR) values. We show,…
Using inhomogeneous Bogoliubov-de Gennes formalism we study superconducting properties of bundles of single wall carbon nanotubes, consisting of a mixture of metallic and semiconducting nanotubes, having different critical transition…
Carrier conduction in wide bandgap semiconductors (WBS) often exhibits velocity saturation at the high-electric field regime. How such effect influences the transition between contact-limited and space-charge-limited current in a…
We present an atomistic self-consistent study of the electronic and transport properties of semiconducting carbon nanotube in contact with metal electrodes of different work functions, which shows simultaneous electron and hole doping…
We introduce two simple models to study the effect of a spatially localized transverse electric field on the low-energy electronic structure of semiconducting carbon nanotubes. Starting from the Dirac Hamiltonian for the low energy states…
We demonstrate charge pumping in semiconducting carbon nanotubes by a traveling potential wave. From the observation of pumping in the nanotube insulating state we deduce that transport occurs by packets of charge being carried along by the…
We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight binding model. The mobility is derived using a multi-band Boltzmann treatment. At high fields, the dominant scattering is inter-band…
Controlling doping is essential for a successful integration of semiconductor materials into device technologies. However, the assessment of doping levels and the distribution of charge carriers in carbon nanotubes or other nanoscale…
Electron properties of Carbon nanotubes in a transverse magnetic field are studied using a model of a massless Dirac particle on a cylinder. The problem possesses supersymmetry which protects low energy states and ensures stability of the…
The current carrying capacity of ballistic electrons in carbon nanotubes that are coupled to ideal contacts is analyzed. At small applied voltages, where electrons are injected only into crossing subbands, the differential conductance is…
We have measured the electrical properties of individual bundles, or "ropes" of single-walled carbon nanotubes. Below ~10 K, the low bias conductance is suppressed for voltages below a few millivolts. In addition, dramatic peaks are…
Response of a single-walled carbon nanotube to external electric field, F, is calculated analytically within the classical electrostatics. Field-induced charge density distribution is approximately linear along the axis of metallic nanotube…