We study the effects of localization on the Hall transport in a granular system at large tunneling conductance gT≫1 corresponding to the metallic regime. We show that the first-order in 1/g_T weak localization correction to Hall resistivity of a two- or three-dimensional granular array vanishes identically, \deρxyWL=0. This result is in agreement with the one for ordinary disordered metals. Being due to an exact cancellation, our result holds for arbitrary relevant values of temperature T and magnetic field H, both in the ``homogeneous'' regime of very low T and H corresponding to ordinary disordered metals and in the ``structure-dependent'' regime of higher values of T or H.
@article{arxiv.0707.4582,
title = {Hall Effect in Granular Metals: Weak Localization Corrections},
author = {Maxim Yu. Kharitonov and Konstantin B. Efetov},
journal= {arXiv preprint arXiv:0707.4582},
year = {2007}
}