We report current-induced spin torques in epitaxial NiMnSb films on a commercially available epi-ready GaAs substrate. The NiMnSb was grown by co-sputtering from three targets using optimised parameter. The films were processed into micro-scale bars to perform current-induced spin-torque measurements. Magnetic dynamics were excited by microwave currents and electric voltages along the bars were measured to analyse the symmetry of the current-induced torques. We found that the extracted symmetry of the spin torques matches those expected from spin-orbit interaction in a tetragonally distorted half-Heusler crystal. Both field-like and damping-like torques are observed in all the samples characterised, and the efficiency of the current-induced torques is comparable to that of ferromagnetic metal/heavy metal bilayers.
@article{arxiv.2012.02568,
title = {Growth, strain and spin orbit torques in epitaxial NiMnSb films sputtered on GaAs},
author = {N. Zhao and A. Sud and H. Sukegawa and S. Komori and K. Rogdakis and K. Yamanoi and J. Patchett and J. W. A. Robinson and C. Ciccarelli and H. Kurebayashi},
journal= {arXiv preprint arXiv:2012.02568},
year = {2021}
}