Related papers: Growth, strain and spin orbit torques in epitaxial…
The manipulation of the magnetization by spin-orbit torques (SOTs) has recently been extensively studied due to its potential for efficiently writing information in magnetic memories. Particular attention is paid to non-centrosymmetric…
Single-phase Ni0.46Mn0.54As films with strained C1b symmetry have been successfully grown on GaAs (001) substrates by molecular-beam epitaxy. The epitaxial relationship between the film and the substrate has been studied using synchrotron…
The half-metallic half-Heusler alloy NiMnSb is a promising candidate for applications in spintronic devices due to its low magnetic damping and its rich anisotropies. Here we use ferromagnetic resonance (FMR) measurements and calculations…
The interplay between half-metallic ferromagnetism and spin-orbit coupling within the inversion symmetry-broken structure of half Heuslers provides an ideal platform for various spintronics functionalities. Taking advantage of good lattice…
Epitaxial films including bulk-like cubic and wurtzite polymorphs of MnSb have been grown by molecular beam epitaxy on GaAs via careful control of the Sb4/Mn flux ratio. Nonzero-temperature density functional theory was used to predict ab…
We present measurements of current-induced spin-orbit torques generated by NbSe$_2$, a fully-metallic transition-metal dichalcogenide material, made using the spin-torque ferromagnetic resonance (ST-FMR) technique with NbSe$_{2}$/Permalloy…
Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners…
We study, both experimentally and by numerical modeling, the magnetic dynamics that can be excited in a magnetic thin-film nanopillar device using the spin torque from a spatially localized current injected via a 10s-of-nm-diameter…
Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of…
Enhanced magnetic moment and coercivity in SrRuO3 thin films are significant issues for advanced technological usages and hence are researched extensively in recent times. Most of the previous reports on thin films with enhanced magnetic…
The electrical manipulation of magnetization by current-induced spin torques has given access to realize a plethora of ultralow power and fast spintronic devices such as non-volatile magnetic memories, spin-torque nano-oscillators, and…
We report unambiguously experimental evidence of a strong orbital current in Nb films with weak spin-orbit coupling via the spin-torque ferromagnetic resonance (ST-FMR) spectrum for Fe/Nb and Co/Nb bilayers. The sign change of the…
We prepared Ga0.95Mn0.05As films on top of periodic arrays of InAs quantum dots. X-ray diffraction reveals periodically strained films, commensurate to substrate's patterning. The dots produce a tensile strain in GaMnAs while between the…
Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a…
A newly identified class of magnetic materials called altermagnets has attracted much attention due to the practical properties of spin-splitting bands akin to ferromagnets and small compensated magnetization akin to antiferromagnets. These…
Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven FMR technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, were analysed to determine the…
Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an…
The flux flow properties of epitaxial niobium films with different pinning strengths are investigated by dc electrical resistance measurements and mapped to results derived within the framework of a theoretical model. Investigated are the…
Si-doped GaN films were grown on $\textit{c}$-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N$_2$ in Ar-N2 growth atmosphere and their epitaxial character was ascertained by phi-scans. Energy…
Current-induced torques originating from earth-abundant 3d elements offer a promising avenue for low-cost and sustainable spintronic memory and logic applications. Recently, orbital currents -- transverse orbital angular momentum flow in…