We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.
@article{arxiv.1209.0250,
title = {Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As},
author = {Pham Nam Hai and Le Duc Anh and Shyam Mohan and Tsuyoshi Tamegai and Masaya Kodzuka and Tadakatsu Ohkubo and Kazuhiro Hono and Masaaki Tanaka},
journal= {arXiv preprint arXiv:1209.0250},
year = {2012}
}
Comments
arXiv admin note: substantial text overlap with arXiv:1106.0561