The ground state energy of current carriers in graphene considered as a zero-gap semiconductor was calculated in the two-band approximation. The condition of the electronic (hole) system stability in graphene was obtained. The possibility of the zero-gap semiconductor-semimetal transition was discussed.
@article{arxiv.0801.4642,
title = {Ground State Energy of Current Carriers in Graphene},
author = {P. V. Ratnikov and A. P. Silin},
journal= {arXiv preprint arXiv:0801.4642},
year = {2008}
}