The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support mid-gap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the mid-gap band is partially filled,the domain wall can behave like a one-dimensional metal embedded in a semi-conductor, and could potentially be used as a single-channel quantum wire.
@article{arxiv.0806.0094,
title = {Domain walls in gapped graphene},
author = {G. W. Semenoff and V. Semenoff and Fei Zhou},
journal= {arXiv preprint arXiv:0806.0094},
year = {2015}
}