Related papers: Domain walls in gapped graphene
Bilayer graphene contains, compared to graphene monolayer, an additional graphene sheet and, therefore, extra degrees of freedom, making it a unique system for complex electronic states to emerge. Here, we show that there are two types of…
Based on the tight-binding model calculations and photonic experimental visualization on graphene, we report the domain-wall-induced gapped topological kink states and topological corner states. In graphene, domain walls with gapless…
Ab initio calculations indicate that while the electronic states introduced by grain boundaries in graphene are only partially confined to the defect core, a domain boundary introduces states near the Fermi level that are very strongly…
The $\pi$-electronic structure of graphene in the presence of a modulated electric potential is investigated by the tight-binding model. The low-energy electronic properties are strongly affected by the period and field strength. Such a…
The electronic states of a finite-width graphene sheet in the presence of an electrostatic confining potential and a perpendicular magnetic field are investigated. The confining potential shifts the Landau levels inside the well and creates…
Electronic states at domain walls in bilayer graphene are studied by analyzing their four and two band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories…
Topological domain walls in dual-gated gapped bilayer graphene host edge states that are gate- tunable and valley polarized. Here we predict that plasmonic collective modes can propagate along these topological domain walls even at zero…
The AB-BA domain wall in gapped graphene bilayers is a rare naked structure hosting topological electronic states. Here we show, for the first time, direct imaging of its topological edge states by using scanning tunneling microscope. The…
We suggest a way of confining quasiparticles by an external potential in a small region of a graphene strip. Transversal electron motion plays a crucial role in this confinement. Properties of thus obtained graphene quantum dots are…
Boundaries between structural twins of bilayer graphene (so-called AB/BA domain walls) are often discussed in terms of the formation of topologically protected valley-polarised chiral states. Here, we show that, depending on the width of…
Domain walls, topological defects that define the frontier between regions of different stacking in multilayer graphene, have proved to host exciting physics. The ability of tuning these topological defects in-situ in an electronic…
The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…
We study the electronic and transport properties of a network of domain walls between insulating domains with opposite valley Chern numbers. We find that the network is semi-metallic with Dirac dispersion near the charge neutrality point…
We study theoretically the electronic structure of topological nodal-line semimetals. We show that, in the presence of a gap-opening spatially dependent mass term that forms a domain wall, an in-gap charged localized mode emerges at the…
In this document we explore graphene, a two-dimensional material with remarkable properties. We center our discussion around its electronic characteristics and their applications. We begin by giving a simple electronic model which will then…
In view of the many quantum field theoretical descriptions of graphene in $2+1$ dimensions, we present another field theoretical feature of graphene, in the presence of defects. Particularly, we shall be interested in gapped graphene in the…
We investigate gated multilayer graphene with stacking order change along the armchair direction. We consider some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the…
Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because…
Electron states localized at a magnetic domain wall in a graphene caplayer with Rashba spin-orbit interaction and coupled to a magnetic overlayer are studied theoretically. It is shown that two one-dimensional bands of edge modes…
We numerically demonstrate that domain walls can be used as spin wave waveguides. We show that gapless spin waves bounded inside a domain wall can be guided by the domain wall. For Bloch walls, we further show that the bound spin waves can…