We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.
@article{arxiv.1708.01877,
title = {Graphene enhanced field emission from InP nanocrystals},
author = {L. Iemmo and A. Di Bartolomeo and F. Giubileo and G. Luongo and M. Passacantando and G. Niu and F. Hatami and O. Skibitzki and T. Schroeder},
journal= {arXiv preprint arXiv:1708.01877},
year = {2017}
}