English

Giant generic topological Hall resistivity of MnSi under pressure

Strongly Correlated Electrons 2014-04-16 v1 Materials Science

Abstract

We report detailed low temperature magnetotransport and magnetization measurements in MnSi under pressures up to 12kbar\sim12\,{\rm kbar}. Tracking the role of sample quality, pressure transmitter, and field and temperature history allows us to link the emergence of a giant topological Hall resistivity 50nΩcm\sim50\,{\rm n\Omega cm} to the skyrmion lattice phase at ambient pressure. We show that the remarkably large size of the topological Hall resistivity in the zero-temperature limit must be generic. We discuss various mechanisms which can lead to the much smaller signal at elevated temperatures observed at ambient pressure.

Keywords

Cite

@article{arxiv.1404.3734,
  title  = {Giant generic topological Hall resistivity of MnSi under pressure},
  author = {R. Ritz and M. Halder and C. Franz and A. Bauer and M. Wagner and R. Bamler and A. Rosch and C. Pfleiderer},
  journal= {arXiv preprint arXiv:1404.3734},
  year   = {2014}
}