A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 C for InP and 700 C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
@article{arxiv.0911.2235,
title = {Generic nano-imprint process for fabrication of nanowire arrays},
author = {Aurelie Pierret and Moira Hocevar and Silke L. Diedenhofen and Rienk E. Algra and E. Vlieg and Eugene C. Timmering and Marc A. Verschuuren and George W. G. Immink and Marcel A. Verheijen and Erik P. A. M. Bakkers},
journal= {arXiv preprint arXiv:0911.2235},
year = {2015}
}