We present a new style of fluxonium qubit, gatemonium, based on an all superconductorsemiconductor hybrid platform. The linear inductance is achieved using six hundred planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time domain characterization of the plasmon modes in a second gatemonium device with different charging energy and JJ array inductance. We discuss future directions for this platform in gate voltage-tunable, high plasma frequency, enhanced impedance junction arrays, and enhanced coherence times for voltage tunable architectures.
@article{arxiv.2406.09002,
title = {Gatemonium: A Voltage-Tunable Fluxonium},
author = {William M. Strickland and Bassel Heiba Elfeky and Lukas Baker and Andrea Maiani and Jaewoo Lee and Ido Levy and Jacob Issokson and Andrei Vrajitoarea and Javad Shabani},
journal= {arXiv preprint arXiv:2406.09002},
year = {2025}
}