We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time T1∼0.56 μs and the dephasing time T2∗∼0.38 μs. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.
@article{arxiv.2302.04053,
title = {Gatemon qubit based on a thin InAs-Al hybrid nanowire},
author = {Jierong Huo and Zezhou Xia and Zonglin Li and Shan Zhang and Yuqing Wang and Dong Pan and Qichun Liu and Yulong Liu and Zhichuan Wang and Yichun Gao and Jianhua Zhao and Tiefu Li and Jianghua Ying and Runan Shang and Hao Zhang},
journal= {arXiv preprint arXiv:2302.04053},
year = {2023}
}
Comments
Raw data and processing codes within this paper are available at: https://doi.org/10.5281/zenodo.7620737