Band gap is known as an effective parameter for tuning the Lande g-factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large g-factor of g≈−90 at the minimum band gap of ∼0.1 eV, which is almost twice that in bulk InSb is found. Further analysis to the zero gap limit reveals a possible gigantic g-factor of g≈−200 with a peculiar relativistic Zeeman effect that disperses as the square root of magnetic field. Such a g-factor enhancement toward the narrow gap limit cannot be quantitatively described by the conventional Roth formula, as the orbital interaction effect between the nearly triply degenerated bands becomes the dominant source for the Zeeman splitting. These results may provide new insights into realizing large g-factors and spin polarized states in semiconductors and topological materials.
Cite
@article{arxiv.2309.04779,
title = {$g$-factor engineering with InAsSb alloys toward zero band gap limit},
author = {Yuxuan Jiang and Maksim Ermolaev and Seongphill Moon and Gela Kipshidze and Gregory Belenky and Stefan Svensson and Mykhaylo Ozerov and Dmitry Smirnov and Zhigang Jiang and Sergey Suchalkin},
journal= {arXiv preprint arXiv:2309.04779},
year = {2023}
}