Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.
@article{arxiv.2105.13176,
title = {Full band Monte Carlo simulation of AlInAsSb digital alloys},
author = {Jiyuan Zheng and Sheikh Z. Ahmed and Yuan Yuan and Andrew Jones and Yaohua Tan and Ann K. Rockwell and Stephen D. March and Seth R. Bank and Avik W. Ghosh and Joe C. Campbell},
journal= {arXiv preprint arXiv:2105.13176},
year = {2021}
}