From Fractional Chern Insulators to a Fractional Quantum Spin Hall Effect
Mesoscale and Nanoscale Physics
2012-01-19 v3 Strongly Correlated Electrons
Abstract
We investigate the algebraic structure of flat energy bands a partial filling of which may give rise to a fractional quantum anomalous Hall effect (or a fractional Chern insulator) and a fractional quantum spin Hall effect. Both effects arise in the case of a sufficiently flat energy band as well as a roughly flat and homogeneous Berry curvature, such that the global Chern number, which is a topological invariant, may be associated with a local non-commutative geometry. This geometry is similar to the more familiar situation of the fractional quantum Hall effect in two-dimensional electron systems in a strong magnetic field.
Keywords
Cite
@article{arxiv.1107.1986,
title = {From Fractional Chern Insulators to a Fractional Quantum Spin Hall Effect},
author = {M. O. Goerbig},
journal= {arXiv preprint arXiv:1107.1986},
year = {2012}
}
Comments
8 pages, 3 figure; published version with labels in Figs. 2 and 3 corrected