The realization of fractional Chern insulators opens up the possibility of exploring fractionally charged excitations and anyonic statistics in the absence of a magnetic field. One of the central questions is whether lattice-based systems can give rise to radically new states, distinct from those observed in traditional fractional quantum Hall systems. In this work, we investigate a new type of moire flat band system composed of Bernal bilayer graphene and rhombohedral tetralayer graphene. First, we discover an unprecedented richness of states with high Chern numbers. At v = 1 moire filling, we observe Chern insulators with Chern numbers C = 4 and 3. Flanking v = 3 state, we observe a series of Chern insulators from C = 2 to C = 7. All of these states exhibit the quantum anomalous Hall effect. Remarkably, we observe an exotic fractional Chern insulator with C = 7/3 around v = 2/3 which is beyond all known fractional Chern insulators described by either the Jain sequence as or current high Chern theory. Our work expands the understanding of fractionally charged excitations beyond the Landau level basis and offers a new moir\'e platform for exploring anyons.
@article{arxiv.2512.21612,
title = {Fractionalization and Entanglement of High Chern Insulators},
author = {Zexu Li and Wenxuan Wang and Fajie Wang and Zaizhe Zhang and Qiu Yang and Kenji Watanabe and Takashi Taniguchi and X. C. Xie and Jie Wang and Kaihui Liu and Zhida Song and Xiaobo Lu},
journal= {arXiv preprint arXiv:2512.21612},
year = {2025}
}