We report first-principles density-functional pseudopotential calculations on the atomic structures, electronic properties, and band offsets of BaO/BaTiO3 and SrO/SrTiO3 nanosized heterojunctions grown on top of a silicon substrate. The density of states at the junction does not reveal any electronic induced interface states. A dominant perovskite character is found at the interface layer. The tunability of the band offset with the strain conditions imposed by the substrate is studied. Using previously reported theoretical data available for Si/SrO, Si/BaO and BaTiO3/SrRuO3 interfaces we extrapolate a value for the band alignments along the whole gate stacks of technological interest: Si/SrO/SrTiO3 and Si/BaO/BaTiO3/SrRuO3 heterostructures.
@article{arxiv.cond-mat/0210666,
title = {First-principles calculation of the band offset at BaO/BaTiO$_3$ and SrO/SrTiO$_3$ interfaces},
author = {Javier Junquera and Magali Zimmer and Pablo Ordejon and Philippe Ghosez},
journal= {arXiv preprint arXiv:cond-mat/0210666},
year = {2009}
}