English

Field-Dependent Hall Effect in Single Crystal Heavy Fermion YbAgGe below 1K

Strongly Correlated Electrons 2009-11-11 v1

Abstract

We report the results of a low temperature (T >= 50 mK) and high field (H <= 180 kOe) study of the Hall resistivity in single crystals of YbAgGe, a heavy fermion compound that demonstrates field-induced non-Fermi-liquid behavior near its field-induced quantum critical point. Distinct features in the anisotropic, field-dependent Hall resistivity sharpen on cooling down and at the base temperature are close to the respective critical fields for the field-induced quantum critical point. The field range of the non-Fermi-liquid region decreases on cooling but remains finite at the base temperature with no indication of its conversion to a point for T -> 0. At the base temperature, the functional form of the field-dependent Hall coefficient is field direction dependent and complex beyond existing simple models thus reflecting the multi-component Fermi surface of the material and its non-trivial modification at the quantum critical point.

Keywords

Cite

@article{arxiv.cond-mat/0507338,
  title  = {Field-Dependent Hall Effect in Single Crystal Heavy Fermion YbAgGe below 1K},
  author = {S. L. Bud'ko and V. Zapf and E. Morosan and P. C. Canfield},
  journal= {arXiv preprint arXiv:cond-mat/0507338},
  year   = {2009}
}