Few-electron semiconductor quantum dots with Gaussian confinement
Mesoscale and Nanoscale Physics
2013-05-28 v1
Abstract
We have performed Hartree-Fock calculations of electronic structure of N \le 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is . Such a property arises from widely valid scaling properties of the con ning potential. Gaussian Quantum dots having N = 2, 5 and 8 electrons are particularly stable in agreement with Hund rule. The shell structure becomes less and less noticeable as the well radius increases.
Keywords
Cite
@article{arxiv.0804.1961,
title = {Few-electron semiconductor quantum dots with Gaussian confinement},
author = {Sergio S. Gomez and Rodolfo H. Romero},
journal= {arXiv preprint arXiv:0804.1961},
year = {2013}
}
Comments
14 pages, 4 figures