English

Few-electron semiconductor quantum dots with Gaussian confinement

Mesoscale and Nanoscale Physics 2013-05-28 v1

Abstract

We have performed Hartree-Fock calculations of electronic structure of N \le 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V0R2V_0 R^2. Such a property arises from widely valid scaling properties of the con ning potential. Gaussian Quantum dots having N = 2, 5 and 8 electrons are particularly stable in agreement with Hund rule. The shell structure becomes less and less noticeable as the well radius increases.

Keywords

Cite

@article{arxiv.0804.1961,
  title  = {Few-electron semiconductor quantum dots with Gaussian confinement},
  author = {Sergio S. Gomez and Rodolfo H. Romero},
  journal= {arXiv preprint arXiv:0804.1961},
  year   = {2013}
}

Comments

14 pages, 4 figures

R2 v1 2026-06-21T10:30:06.442Z