We exploit scanning probe controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS2 between a transistor and a junction state. In the presence of a domain wall, MoS2 exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height varies from 0.38 eV to 0.57 eV and is tunabe by a SiO2 global back-gate, while the tuning range of depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieving programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.
@article{arxiv.1606.01322,
title = {Ferroelectric Domain Patterning Controlled Schottky Junction State in Monolayer MoS$_2$},
author = {Zhiyong Xiao and Jingfeng Song and David K. Ferry and Stephen Ducharme and Xia Hong},
journal= {arXiv preprint arXiv:1606.01322},
year = {2017}
}