Background: To ensure consistent and high-quality semiconductor production at future logic nodes, additional metrology tools are needed. For this purpose, grazing-incidence small-angle X-ray scattering (GISAXS) is being considered because measurements are fast with a proven capability to reconstruct average grating line profiles with high accuracy. Aim: GISAXS measurements of grating line shapes should be extended to samples with pitches smaller than 50 nm and their defects. The method's performance should be evaluated. Approach: A series of gratings with 32 nm pitch and deliberately introduced pitchwalk is measured using GISAXS. The grating line profiles with associated uncertainties are reconstructed using a Maxwell solver and Markov-Chain Monte Carlo (MCMC) sampling combined with a simulation library approach. Results: The line shape and the pitchwalk are generally in agreement with previously published transmission small-angle X-ray scattering (SAXS) results; however the line height and line width show deviations of (1.0 +/- 0.2) nm and (2.0 +/- 0.7) nm, respectively. The complex data evaluation leads to relatively high pitchwalk uncertainties between 0.5 nm and 2 nm. Conclusions: GISAXS shows great potential as a metrology tool for small-pitch line gratings with complex line profiles. Faster simulation methods would enable more accurate results.
@article{arxiv.1910.08532,
title = {Extracting Dimensional Parameters of Gratings Produced with Self-Aligned Multiple Patterning Using GISAXS},
author = {Mika Pflüger and R. Joseph Kline and Analía Fernández Herrero and Martin Hammerschmidt and Victor Soltwisch and Michael Krumrey},
journal= {arXiv preprint arXiv:1910.08532},
year = {2020}
}