English

Explaining the x-ray nonlinear susceptibility of diamond and silicon near absorption edges

Materials Science 2015-10-16 v1

Abstract

We report the observation and the theoretical explanation of the parametric down-conversion nonlinear susceptibility at the KK-absorption edge of diamond and at the L23L_{23}-absorption edge of a silicon crystal. Using arguments similar to those invoked to successfully predict resonant inelastic x-ray spectra, we derive an expression for the renormalization term of the non-linear susceptibility at the x-ray edges, which can be evaluated by using first-principles calculations of the atomic scattering factor f1f_1. Our model is shown to reproduce the observed enhancement of the parametric down-conversion at the diamond KK and the Si L23L_{23} edges rather than the suppression previously claimed.

Keywords

Cite

@article{arxiv.1510.04302,
  title  = {Explaining the x-ray nonlinear susceptibility of diamond and silicon near absorption edges},
  author = {B. Barbiellini and Y. Joly and Kenji Tamasaku},
  journal= {arXiv preprint arXiv:1510.04302},
  year   = {2015}
}

Comments

5 pages, 4 figures