Explaining the x-ray nonlinear susceptibility of diamond and silicon near absorption edges
Materials Science
2015-10-16 v1
Abstract
We report the observation and the theoretical explanation of the parametric down-conversion nonlinear susceptibility at the -absorption edge of diamond and at the -absorption edge of a silicon crystal. Using arguments similar to those invoked to successfully predict resonant inelastic x-ray spectra, we derive an expression for the renormalization term of the non-linear susceptibility at the x-ray edges, which can be evaluated by using first-principles calculations of the atomic scattering factor . Our model is shown to reproduce the observed enhancement of the parametric down-conversion at the diamond and the Si edges rather than the suppression previously claimed.
Keywords
Cite
@article{arxiv.1510.04302,
title = {Explaining the x-ray nonlinear susceptibility of diamond and silicon near absorption edges},
author = {B. Barbiellini and Y. Joly and Kenji Tamasaku},
journal= {arXiv preprint arXiv:1510.04302},
year = {2015}
}
Comments
5 pages, 4 figures