We report on coherent emission of the neutral exciton state in a single semiconductor self-assembled InAs/GaAs quantum dot embedded in a one-dimensional waveguide, under resonant picosecond pulsed excita- tion. Direct measurements of the radiative lifetime and coherence time are performed as a function of excitation power and temperature. The characteristic damping of Rabi oscillations which is observed, is attributed to an excitation-induced dephasing due to a resonant coupling between the emitter and the acoustic phonon bath of the matrix. Other sources responsible for the decrease of the coherence time have been evidenced, in particular an enhancement of the radiative recombination rate due to the resonant strong coupling between the dot and the one-dimensional optical mode. As a consequence, the emission couples very efficiently into the waveguide mode leading to an additional relaxation term of the excited state population.
@article{arxiv.1304.4756,
title = {Excitation-induced dephasing in a resonantly driven InAs/GaAs quantum dot},
author = {Léonard Monniello and Catherine Tonin and Richard Hostein and Aristide Lemaitre and Anthony Martinez and Valia Voliotis and Roger Grousson},
journal= {arXiv preprint arXiv:1304.4756},
year = {2014}
}