We study the evolution of the spectral function with progressive hole doping in a Mott insulator, La1−xCaxVO3 with x = 0.0 - 0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter, U/W, is shown to describe consistently the spectral evolution.
@article{arxiv.cond-mat/9803138,
title = {Evolution of spectral function in a doped Mott insulator : surface vs. bulk contributions},
author = {K. Maiti and Priya Mahadevan and D. D. Sarma},
journal= {arXiv preprint arXiv:cond-mat/9803138},
year = {2009}
}
Comments
Revtex, 4 pages, 3 postscript figures. To appear in Phys. Rev. Lett